1 transistors publication date: march 2003 sjc00142bed 2sC3931 silicon npn epitaxial planar type for high-frequency amplification features ? optimum for rf amplification of fm/am radios ? high transition frequency f t ? s-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 30 v collector-emitter voltage (base open) v ceo 20 v emitter-base voltage (collector open) v ebo 3v collector current i c 15 ma collector power dissipation p c 150 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 030v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 03v base-emitter voltage v be v cb = 6 v, i e = ? 1 ma 720 mv forward current transfer ratio * h fe v cb = 6 v, i e = ? 1 ma 65 260 ? transition frequency f t v cb = 6 v, i e = ? 1 ma, f = 200 mhz 450 650 mhz common-emitter reverse transfer c re v cb = 6 v, i e = ? 1 ma, f = 10.7 mhz 0.8 1.0 pf capacitance power gain g p v cb = 6 v, i e = ? 1 ma, f = 100 mhz 24 db noise figure nf v cb = 6 v, i e = ? 1 ma, f = 100 mhz 3.3 db unit: mm electrical characteristics t a = 25 c 3 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification 2.1 0.1 1.3 0.1 0.3 +0.1 ?0.0 2.0 0.2 1.25 0.10 (0.425) 1 3 2 (0.65) (0.65) 0.2 0.1 0.9 0.1 0 to 0.1 0.9 +0.2 ?0.1 0.15 +0.10 ?0.05 5? 10? 1: base 2: emitter 3:collector eiaj: sc-70 smini3-g1 package marking symbol: u rank c d h fe 65 to 160 100 to 260
2sC3931 2 sjc00142bed i c ? v be v ce(sat) ? i c h fe ? i c p c ? t a i c ? v ce i c ? i b f t ? i e z rb ? i e c re ? v ce 0 160 40 120 80 0 200 160 120 80 40 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 018 612 0 12 10 8 6 4 2 t a = 25 c i b = 100 a 80 a 60 a 40 a 20 a collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 180 60 120 0 12 10 8 6 4 2 v ce = 6 v t a = 25 c base current i b ( a ) collector current i c ( ma ) 0 2.0 1.6 0.4 1.2 0.8 0 30 25 20 15 10 5 v ce = 6 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0.1 1 10 100 0 360 300 240 180 120 60 v ce = 6 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) ? 0.1 ? 1 ? 10 ? 100 0 1 200 1 000 800 600 400 200 v cb = 6 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) ? 0.1 ? 1 ? 10 0 120 100 80 60 40 20 v cb = 6 v f = 2 mhz t a = 25 c reverse transfer impedance z rb ( ? ) emitter current i e ( ma ) 0.1 1 10 100 0 2.4 2.0 1.6 1.2 0.8 0.4 i c = 1 ma f = 10.7 mhz t a = 25 c collector-emitter voltage v ce ( v ) common-emitter reverse transfer capacitance c re ( pf )
2sC3931 3 sjc00142bed c ob ? v cb g p ? i e nf ? i e b ie ? g ie b re ? g re b fe ? g fe b oe ? g oe 030 25 20 515 10 0 1.2 1.0 0.8 0.6 0.4 0.2 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) ? 0.1 ? 1 ? 10 ? 100 0 40 30 10 20 f = 100 mhz r g = 50 ? t a = 25 c v ce = 10 v 6 v power gain g p ( db ) emitter current i e ( ma ) ? 0.1 ? 1 ? 10 ? 100 0 12 10 8 6 4 2 f = 100 mhz r g = 50 k ? t a = 25 c v ce = 6 v, 10 v noise figure nf ( db ) emitter current i e ( ma ) 015 9 36 12 0 20 16 12 8 4 y ie = g ie + jb ie v ce = 10 v 100 100 ? 1 ma ? 2 ma ? 4 ma ? 7 ma i e = ? 0.5 ma 150 f = 10.7 mhz 58 58 25 25 input conductance g ie ( ms ) input susceptance b ie ( ms ) ? 0.5 0 ? 0.1 ? 0.4 ? 0.2 ? 0.3 ? 6 0 ? 1 ? 2 ? 3 ? 4 ? 5 y re = g re + jb re v ce = 10 v f = 150 mhz i e = ? 7 ma ? 4 ma ? 1 ma 25 58 100 10.7 reverse transfer conductance g re ( ms ) reverse transfer susceptance b re ( ms ) 0 100 80 20 60 40 ? 120 0 ? 20 ? 40 ? 60 ? 80 ? 100 y fe = g fe + jb fe v ce = 10 v f = 150 mhz 10.7 ? 0.4 ma ? 1 ma ? 2 ma ? 4 ma i e = ? 7 ma 100 100 100 150 150 58 58 forward transfer conductance g fe ( ms ) forward transfer susceptance b fe ( ms ) 0 0.5 0.4 0.1 0.3 0.2 0 1.2 1.0 0.8 0.6 0.4 0.2 y oe = g oe + jb oe v ce = 10 v f = 10.7 mhz i e = ? 0.5 ma ? 2 ma ? 4 ma ? 7 ma ? 1 ma 58 25 100 150 output conductance g oe ( ms ) output susceptance b oe ( ms )
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
|
